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gan-hemt

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Physics-informed ML and adjoint co-design of a monolithic e-mode GaN-on-SOI fractional-N PLL with HEMT varactors for extreme-temperature timing (218-423 K): PINN surrogate, differentiable JAX loop, discrete-adjoint optimization, GCN-SAC RL, WGAN yield, and open-source EDA transistor-level closure.

  • Updated Jul 31, 2026
  • Python

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